Publications of Dr.K.S.Krishna Kumar
- [1]Bote Vaishali Raosaheb, Sudhakara Aralihalli, Ekwipoo Kalkornsurapranee, Akarapong Tuljittraporn, Arthittaya Chuaybamrung, K.S Krishna Kumar, Jobish Johns (2023). Synergistic effects of 2, 4 dihydroxybenzaldehyde and carbon black nanoparticles on the properties of natural rubber. Emergent Materials. https://doi.org/10.1007/s42247-023-00528-6-y. (Q2 Ranked)
INTERNATIONAL JOURNAL PAPERS
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Hardness studies on silicon NPN bipolar transistor irradiated with 120MeV nickel ion. American Institute of Physics (AIP) 2142, 140024 (2019). DOI: 10.1063/1.5122537
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Carbon ion irradiation damage effects on electrical characteristics of silicon PNP power BJTs, I-EEE Transactions On Device and Materials Reliability, Vol.15, No.1, march-2015 Digital Object Identifier 10.1109/TDMR.2015.2402212
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Boron ion interaction with pnp Bipolar power transistor and displacement damage effects on its electrical characteristics, Procedia Materials Science 5 (2014) 575 – 584 Available online at www.sciencedirect.com 2211-8128 © 2014 Elsevier Ltd. doi: 10.1016/j.mspro.2014.07.302
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30 and 60 MeV Boron Ion Irradiation Effects on Electrical Characteristics of Bipolar Transistor, Proc. SPIE Vol.8549 85490 (2012) PP 1-6 DOI-10.1117/12.926278.
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Boron and Gamma ray irradiation effects on I-V and C-V characteristics of Photo detector MRD 500 International Journal of ChemTech Research CODEN (USA): IJCRGG ISSN: 0974-4290 Vol.6, No.3, pp 1901-1903, May-June 2014.
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Electrical and defect studies in high energy Lithium ion irradiated Silicon Bipolar Power Transistor, International Conference on Nano Science and Engineering and Advanced Computing ICNEAC- 2011, JULY 8-10-2011, ISBN: 978-81-8465-683-1
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Effect of 60 MeV Boron Ion Irradiation on Silicon NPN Power Transistor (2N3866), 1st International conference on physics of materials and material based device fabrication (ICPM-MDF 2012.) Shivaji University, Kolhapur.
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Effect of 100MeV oxygen ion irradiation on silicon NPN power transistor, 56 th solid State Physics Symposium, SRM University, Kattankulathur, Tamil Nadu, India. Journal American Institute of Physics. Dec-19-23, 2011/ Citation: AIP Conf. Proc. 1447, 1085 (2012); doi:10.1063/1.4710384 volume 1447 issue 1.
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Study of Structural Modifications Due to Substitution of ni and mn for cu in bi2 sr2 cuo6 Superconducting Compound, Proceedings of DAE- Solid State Symposium -2007, 31Dec-2007, Mysore University, Mysore.
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Effect of 60 Mev Boron Ion Irradiation on Silicon NPN Power Transistor (2N3773), 1st International conference on physics of materials and material based device fabrication (ICPM- MDF 2012.) Shivaji University, Kolhapur.
WORKSHOP / SEMINAR / CONFERENCES PARTICIPATION
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Presented a paper on Hardness studies on silicon NPN bipolar transistor irradiated with 120MeV nickel ion. ICABS-19, Haryana, India 7th to 9th Feb 2019.
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Participated in the 1st international conference on physics of materials and material based device fabrication (ICPM-MDF) 2012. January 17-19 2012. Dept. of Physics, Shivaji University Kolhapur, India and presented poster on “30 and 60 MeV B ion irradiation effects on electrical Characteristics of bipolar transistor” and awarded 2nd Prize for best poster presentation.
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Attended International conference on Nanoscience, Engineering & Advanced Computing (ICNEAC) 2011. July 8-10, 2011.Swarnandra College of Engineering and Technology, Narasapur, A.P., India. & submitted paper on “Electrical and defect studies in high energy lithium ion Irradiated silicon bipolar power transistors”
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Participated in XVI international workshop on physics of semiconductor devices (IWPSD) 2011.19-22 Dec, IIT Kanpur, India. And submitted paper “60 and 100 MeV Oxygen ion Irradiation effects on electrical characteristics of bipolar transistor” and made poster presentation.
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Attended 5 days work shop on faculty Empowerment conducted by WIPRO Mission 10x, at MSEC, Bangalore. 14-18 March 2011.
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Attended advanced workshop conducted By WIPRO Mission10X on “High Impact teaching Skills “14th and 15th May 2011, Nagarjuna college of Engineering and Technology, Chickballapur.
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Attended WIPRO Mission 10X conclave, at Dayanandsagar College of Engineering, Bangalore. On 08/11/2011.
TEXTBOOKS PUBLISHED
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Heavy ion irradiation effects on semiconductor devices, ISBN: 978-620-2-55600-2 in Lambert Academic Publishers (2020)