Publication

Publications of Dr.K.S.Krishna Kumar

INTERNATIONAL JOURNAL PAPERS

    1. Hardness studies on silicon NPN bipolar transistor irradiated with 120MeV nickel ion. American Institute of Physics (AIP) 2142, 140024 (2019). DOI: 10.1063/1.5122537

    2. Carbon ion irradiation damage effects on electrical characteristics of silicon PNP power BJTs, I-EEE Transactions On Device and Materials Reliability, Vol.15, No.1, march-2015 Digital Object Identifier 10.1109/TDMR.2015.2402212

    3. Boron ion interaction with pnp Bipolar power transistor and displacement damage effects on its electrical characteristics, Procedia Materials Science 5 (2014) 575 – 584 Available online at www.sciencedirect.com 2211-8128 © 2014 Elsevier Ltd. doi: 10.1016/j.mspro.2014.07.302

    4. 30 and 60 MeV Boron Ion Irradiation Effects on Electrical Characteristics of Bipolar Transistor, Proc. SPIE Vol.8549 85490 (2012) PP 1-6 DOI-10.1117/12.926278.

    5. Boron and Gamma ray irradiation effects on I-V and C-V characteristics of Photo detector MRD 500 International Journal of ChemTech Research CODEN (USA): IJCRGG ISSN: 0974-4290 Vol.6, No.3, pp 1901-1903, May-June 2014.

    6. Electrical and defect studies in high energy Lithium ion irradiated Silicon Bipolar Power Transistor, International Conference on Nano Science and Engineering and Advanced Computing ICNEAC- 2011, JULY 8-10-2011, ISBN: 978-81-8465-683-1

    7. Effect of 60 MeV Boron Ion Irradiation on Silicon NPN Power Transistor (2N3866), 1st International conference on physics of materials and material based device fabrication (ICPM-MDF 2012.) Shivaji University, Kolhapur.

    8. Effect of 100MeV oxygen ion irradiation on silicon NPN power transistor, 56 th solid State Physics Symposium, SRM University, Kattankulathur, Tamil Nadu, India. Journal American Institute of Physics. Dec-19-23, 2011/ Citation: AIP Conf. Proc. 1447, 1085 (2012); doi:10.1063/1.4710384 volume 1447 issue 1.

    9. Study of Structural Modifications Due to Substitution of ni and mn for cu in bi2 sr2 cuo6 Superconducting Compound, Proceedings of DAE- Solid State Symposium -2007, 31Dec-2007, Mysore University, Mysore.

    10. Effect of 60 Mev Boron Ion Irradiation on Silicon NPN Power Transistor (2N3773), 1st International conference on physics of materials and material based device fabrication (ICPM- MDF 2012.) Shivaji University, Kolhapur.

WORKSHOP / SEMINAR / CONFERENCES PARTICIPATION

    1. Presented a paper on Hardness studies on silicon NPN bipolar transistor irradiated with 120MeV nickel ion. ICABS-19, Haryana, India 7th to 9th Feb 2019.

    2. Participated in the 1st international conference on physics of materials and material based device fabrication (ICPM-MDF) 2012. January 17-19 2012. Dept. of Physics, Shivaji University Kolhapur, India and presented poster on “30 and 60 MeV B ion irradiation effects on electrical Characteristics of bipolar transistor” and awarded 2nd Prize for best poster presentation.

    3. Attended International conference on Nanoscience, Engineering & Advanced Computing (ICNEAC) 2011. July 8-10, 2011.Swarnandra College of Engineering and Technology, Narasapur, A.P., India. & submitted paper on “Electrical and defect studies in high energy lithium ion Irradiated silicon bipolar power transistors”

    4. Participated in XVI international workshop on physics of semiconductor devices (IWPSD) 2011.19-22 Dec, IIT Kanpur, India. And submitted paper “60 and 100 MeV Oxygen ion Irradiation effects on electrical characteristics of bipolar transistor” and made poster presentation.

    5. Attended 5 days work shop on faculty Empowerment conducted by WIPRO Mission 10x, at MSEC, Bangalore. 14-18 March 2011.

    6. Attended advanced workshop conducted By WIPRO Mission10X on “High Impact teaching Skills “14th and 15th May 2011, Nagarjuna college of Engineering and Technology, Chickballapur.

    7. Attended WIPRO Mission 10X conclave, at Dayanandsagar College of Engineering, Bangalore. On 08/11/2011.

TEXTBOOKS PUBLISHED

    1. Heavy ion irradiation effects on semiconductor devices, ISBN: 978-620-2-55600-2 in Lambert Academic Publishers (2020)