Publication

Publications of Dr.K.S.Krishna Kumar

    1. K. S. Krishna Kumar, C. M. Dinesh, K. V. Madhu, Ramani, Ramakrishna Damle, M.C.Radhakrishna, Saif Ahmad Khan, and Dinakar Kanjilal “Carbon ion irradiation damage effects on electrical characteristics of silicon PNP power BJTs “I-EEE Transactions On Device and Materials Reliability,Vol.15,No.1,march-2015 Digital Object Identifier 10.1109/TDMR.2015.2402212

    2. K. S. Krishna Kumar, C. M. Dinesh, K. V. Madhu, Ramani, Ramakrishna Damle, Saif Ahmad Khan, and Dinakar Kanjilal “Boron ion interaction with pnp Bipolar power transistor and displacement damage effects on its electrical characteristics” Procedia Materials Science 5( 2014 ) 575 – 584 Available online at www.sciencedirect.com 2211-8128 © 2014 Elsevier Ltd. doi: 10.1016/j.mspro.2014.07.302

    3. K. S. Krishna Kumar, C. M. Dinesh, K. V. Madhu, Ramani, Ramakrishna Damle, Saif Ahmad Khan, and Dinakar Kanjilal ”30 and 60 MeV Boron Ion Irradiation Effects on Electrical Characteristics of Bipolar Transistor” Proc. SPIE Vol.8549 85490 (2012 ) PP 1-6 DOI-0.1117/12.926278.

    4. K. S. Krishna Kumar, C. M. Dinesh, K. V. Madhu, Ramani, Ramakrishna Damle, Saif Ahmad Khan, and Dinakar Kanjilal “Boron and Gamma ray irradiation effects on I-V and C-V characteristics of Photo detector MRD 500” Int.J.Chem Tech Res.2014,6(3) PP 1901-1903.ISSN -0974-4290.

    5. K. S. Krishna Kumar, C. M. Dinesh, K. V. Madhu, Ramani, Ramakrishna Damle, Saif Ahmad Khan, and Dinakar Kanjilal “Effect Of 60 Mev Boron Ion Irradiation On Silicon NPN Power Transistor(2N3866)” 1st international conference on physics of materials and material based device fabrication (ICPM-MDF 2012.) Shivaji University, Kolhapur.2012.

    6. Vinay Kumar, K. S. Krishna Kumar, C. M. Dinesh B.jayashree. S.Krishnaveni Ramani, “Effect of 60 Mev Boron ion irradiation on Silicon NPN power transistor”1st international conference on physics of materials and material based device fabrication (ICPM-MDF 2012.) ShivajiUniversity, Kolhapur.2012.

    7. M. Vinay Kumar, K. S. Krishna Kumar, C. M. Dinesh, S. Krishnaveni, and Ramani “Effect of 100MeV oxygen ion irradiation on silicon NPN power transistor ”Citation: AIP Conférence. Proc. 1447, 1085 (2012); doi: 10.1063/1.4710384. 56 th solid State physics Symposium, SRM university, Kattankulathur, Tamil Nadu, India Journal American Institute of Physics.

    8. M. Vinay Kumar, T.Yashoda C. M. Dinesh K. S. Krishna Kumar, Jayashree , Ramani S. Krishnaveni, A Comparative study of 30 MeV Boron 4+ and Oxygen 8+ ion irradiated Si NPN BJTs AIP Conference Proceedings .1665,1200 http://dx.doi.org/10.1063/1,4918146.

    9. C.M. Dinesh ,K. S. Krishna Kumar, M.C. Radhakrishna, Ramani, Electrical and defect studies in high energy Lithium ion irradiated Silicon Bipolar Power Transistor International Conference On Nano Science and Engineering and Advanced Computing ICNEAC-2011 JULY 8-10-2011,ISBN:978-81-8465-683-1 Narasapur, Andhra Pradesh.